International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures

J. Phys. IV France 11 (2001) Pr11-253-Pr11-260
DOI: 10.1051/jp4:20011141

Low pressure CVD of transparent Cu-Al-O and Cu-Ti-O thin films

D. Barreca¹, G.A. Battiston², U. Casellato², R. Gerbasi² and E. Tondello<sup>1

1</sup>  Centro di Studio Sulla Stabilità e Reattività dei Composti di Coordinazione del CNR and Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Università di Padova, Via Marzolo 1, 35131 Padova, Italy
²  Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Corso Stati Uniti 4, 35127 Padova, Italy

Abstract
Semiconducting materials with optical transparency are gaining increasing attention for the preparation of next-generation optical devices. In this work, Chemical Vapour Deposition of nanophasic Cu-Ti-O and Cu-Al- O thin films is performed on glassy substrates by using copper(II) acetylacetonate hydrate [Cu(acac)₂.H₂O], titanium tetraisopropoxide [Ti(OⁱPr)₄] and aluminium dimethylisopropoxide [(CH₃)₂Al(OⁱC₃H₇)] as Cu, Ti and Al precursors respectively, in the temperature range 215-370°. The syntheses are carried out in a N₂+O₂ or N₂+H₂O atmosphere. The obtained coatings are characterised in detail in their composition, microstructure, optical and electrical properties. The discussion is focused on the most relevant results concerning their composition, with particular attention to Cu oxidation state as a function of experimental conditions, optical transparency and semiconductor behaviour.

© EDP Sciences 2001