| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-805 - Pr8-809 | |
| DOI | https://doi.org/10.1051/jp4:19998102 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-805-Pr8-809
DOI: 10.1051/jp4:19998102
Department of Electronic Engineering, Jilin University, Changchun 130023, China
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-805-Pr8-809
DOI: 10.1051/jp4:19998102
Study of sensing complex thin films prepared by PECVD method to H2S
G. Dai and Y. WuDepartment of Electronic Engineering, Jilin University, Changchun 130023, China
Abstract
SnO2 thin films were prepared using SnCl4 and O2 as precursors by means of plasma enhanced chemical vapour deposition method (PECVD) , and were modified with CuO by soaked technique to form a SnO2-CuO-SnO2 sandwich structure. The sensing complex thin films were proved to be highly sensitive and selective to H2S. Furthermore, the response and recovery speed of the thin films was fairly quick.
© EDP Sciences 1999