| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-209 - Pr3-212 | |
| DOI | https://doi.org/10.1051/jp4:1998346 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-209-Pr3-212
DOI: 10.1051/jp4:1998346
1 Laboratoire des Instruments et Systèmes, Université Pierre et Marie Curie (Paris 6), 4 place Jussieu, 75252 Paris cedex 05, France
2 Laboratoire de Génie Électrique de Paris, Universités Paris 6 et 11, URA 127 du CNRS, Supélec, Plateau du Moulon, 91192 Gif-sur-Yvette cedex, France
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-209-Pr3-212
DOI: 10.1051/jp4:1998346
A low noise, low power consumption CMOS cryogenic preamplifier for superconducting infrared detectors
Y. Hu1, G. Klisnick1, F. Voisin1, M. Redon1, A. Gaugue2 and A. Kreisler21 Laboratoire des Instruments et Systèmes, Université Pierre et Marie Curie (Paris 6), 4 place Jussieu, 75252 Paris cedex 05, France
2 Laboratoire de Génie Électrique de Paris, Universités Paris 6 et 11, URA 127 du CNRS, Supélec, Plateau du Moulon, 91192 Gif-sur-Yvette cedex, France
Abstract
A low noise, low power CMOS cryogenic preamplifier has been designed and tested at room and low temperature (77 K). Simulation results show that an input equivalent noise of 2.7 nV/√Hz at 10 kHz can be obtained at room temperature, whereas measurement results are 3.2nV/√Hz at 300 K and 2nV/√Hz at 77 K. This preamplifier has been used in conjunction with a thin YBaCuO superconducting film to make an integrated cryogenic infrared bolometer.
© EDP Sciences 1998