| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
|
|
|---|---|---|
| Page(s) | C2-1147 - C2-1148 | |
| DOI | https://doi.org/10.1051/jp4:19972166 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-1147-C2-1148
DOI: 10.1051/jp4:19972166
1 Department of Physics, Tamkang University, Tamsui, Taiwan 251, Republic of China
2 Department of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804, U.S.A.
3 Synchrotron Radiation Research Center (SRRC), Hsinchu Science-based Industrial Park, Taiwan 300, Republic of China
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-1147-C2-1148
DOI: 10.1051/jp4:19972166
XAFS Studies of Diluted Magnetic Semiconductors Zn1-xMxS (M = Mn, Co)
W.F. Pong1, R.A. Mayanovic2, J.K. Kao1, H.H. Hsieh1, J.Y. Pieh1, Y.K. Chang1, K.C. Kuo1, P.K. Tseng1 and J.F. Lee31 Department of Physics, Tamkang University, Tamsui, Taiwan 251, Republic of China
2 Department of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804, U.S.A.
3 Synchrotron Radiation Research Center (SRRC), Hsinchu Science-based Industrial Park, Taiwan 300, Republic of China
Abstract
X-ray absorption near edges structure (XANES) spectra of the Diluted Magnetic Semiconductors (DMS) system
Zn1-xMxS (M=Mn, Co) have been measured at the Mn and Co L3,2-edge using sample current mode. Analysis of the M L3,2-edge
XANES spectra for Zn1-xMxS revealed the presence of a white line feature in each series, whose intensity increased linearly with
concentration x. The white line feature is assigned to M 2p3/2 and 2p1/2 photoelectron excitations to nonbonding 3d(e) states and to
the relatively broadened band of M 3d(t2) - S 3p hybridized antibonding states. The rate of increase of L3,2 white line intensity
with x is associated with the difference in the degree of p-d hybridization of states between M 3d and S 3p.
© EDP Sciences 1997