| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
|
|
|---|---|---|
| Page(s) | C2-711 - C2-712 | |
| DOI | https://doi.org/10.1051/jp4:1997215 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-711-C2-712
DOI: 10.1051/jp4:1997215
1 LURE, bâtiment 209a, 91405 Orsay cedex, France
2 II. Physikalisches Institut und SFB 345, Universität Göttingen, 37073 Göttingen, Germany
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-711-C2-712
DOI: 10.1051/jp4:1997215
Local Structure of Ion-Bombarded α-SiC Analyzed by EXAFS
M. Borowski1, W. Bolse2 and J. Conrad21 LURE, bâtiment 209a, 91405 Orsay cedex, France
2 II. Physikalisches Institut und SFB 345, Universität Göttingen, 37073 Göttingen, Germany
Abstract
X-ray absorption spectroscopy on the Si k-edge was performed on α-SiC (6H) to monitor the evolution of the local structure around the Si atoms after ion bombardment. The samples were irradiated by 50 keV Na ions at fluences of 1013 - 1016 ions/cm2 at a temperature of 80 K. EXAFS analysis clearly reveals that the hetero-atomic short range order of the crystalline matrix is almost completely conserved over the crystalline-to-amorphous transition as indicated by RBS-C. Further irradiation at higher fluences results in a change of the atomic coordination and formation of homonuclear Si-Si bonds.
© EDP Sciences 1997