Numéro
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
Page(s) C2-1107 - C2-1109
DOI https://doi.org/10.1051/jp4:19972149
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-1107-C2-1109

DOI: 10.1051/jp4:19972149

Structural Investigation of Small Cu Clusters Obtained by Ion-Implantation in Amorphous Silica

F. D'Acapito1, 2, E. Cattaruzza3, F. Gonella3, S. Mobilio4, J.R. Regnard5 and F. Spizzo3

1  Consiglio Nazionale delle Ricerche, P.le Aldo Moro 7, 00185 Roma, Italia
2  E.S.R.F. GILDA CRG, BP. 220, 38043 Grenoble, France
3  I.N.F.M. and Dipartimento di Fisica, Via Marzolo 8, 35131 Padova, Italia
4  Dipartimento di Fisica, Università di Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italia
5  Département de Recherche Fondamentale sur la Matière Condensée SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France


Abstract
In this paper we present an EXAFS study on Cu clusters obtained by ion-implantation in amorphous silica substrates. As-implanted and 700°C annealed samples were analyzed both at liquid nitrogen temperature and room temperature in order to determine the structural parameters. Evidence of a lattice contraction beyond the anharmonic correction were found in the tiniest particles, as well as a clear contribution of static disorder to the total Debye-Waller factor. No change of the Debye temperature due to overpressure was found in agreement with the calculations.



© EDP Sciences 1997