| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-1021 - C2-1022 | |
| DOI | https://doi.org/10.1051/jp4:19972125 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-1021-C2-1022
DOI: 10.1051/jp4:19972125
1 Fachbereich Physik, Universität-GH Paderborn, 33095 Paderborn, Germany
2 Institut für Experimentalphysik, Technische Universität Wien, 1040 Wien, Austria
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-1021-C2-1022
DOI: 10.1051/jp4:19972125
Temperature and Pressure Induced Valence Transitions in YbCu5-xGax Studied by Yb-LIII XANES
R. Lübbers1, J. Dumschat1, O. Wortmann1 and E. Bauer21 Fachbereich Physik, Universität-GH Paderborn, 33095 Paderborn, Germany
2 Institut für Experimentalphysik, Technische Universität Wien, 1040 Wien, Austria
Abstract
Employing the Yb-LIII XANES, YbCu5, YbCu4Ga, YbCu3Ga2 and YbCu3.5Ga1.5 were studied in the temperature range 25 K to 300 K. YbCu5 and YbCu4Ga were studied at 300 K at pressures up to 175 kbar.
© EDP Sciences 1997