Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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Page(s) | C2-1017 - C2-1018 | |
DOI | https://doi.org/10.1051/jp4:19972123 |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-1017-C2-1018
DOI: 10.1051/jp4:19972123
LURE, Centre Universitaire, Bât. 209D, 91405 Orsay, France
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-1017-C2-1018
DOI: 10.1051/jp4:19972123
Nanometric Si/C/N Powders : EXAFS Study at the Silicon K Edge
F. Ténégal and A.M. FlankLURE, Centre Universitaire, Bât. 209D, 91405 Orsay, France
Abstract
Preceramic nanosized Si/C/N powders with a variable C/N ratio have been investigated by X-ray absorption spectroscopy at the silicon K edge. By combining XANES and EXAFS analysis results, we have proposed a model for the local structure of the as-prepared powders. This structural amorphous model has been tested through multiple scattering calculations using the FEFF code calculations. The evolution during the pyrolysis process is followed, specially for intermediate C/N values for which a delay in the crystallisation temperature occurs. Before the formation of very small crystallites, one can observe a reorganisation of the short range atomic structure.
© EDP Sciences 1997