| Numéro |
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-175 - C7-178 | |
| DOI | https://doi.org/10.1051/jp4:1994742 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-175-C7-178
DOI: 10.1051/jp4:1994742
1 Dept. of Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, Japan
2 Dept. of Resource and Environmental Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, Japan
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-175-C7-178
DOI: 10.1051/jp4:1994742
Investigation of the recrystallization of amorphized InP layers using photoacoustic technique
H. Yoshinaga1, T. Agui1, T. Matsumori1 and F. Uehara21 Dept. of Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, Japan
2 Dept. of Resource and Environmental Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, Japan
Abstract
The annealing behavior of the amorphous layers produced by heavy Si+ implantation in InP substrates is studied using the piezoelectric PAS with implantation energy as a parameter. The usefulness of PAS is elucidated for investigating depth profile of disorder (defects) in implanted layers and its annealing characteristics.
© EDP Sciences 1994