| Numéro |
J. Phys. IV France
Volume 03, Numéro C9, Décembre 1993
Proceedings of the 3rd International Symposium on High Temperature Corrosion and Protection of MaterialsActes du 3ème Colloque International sur la Corrosion et la Protection des Matériaux à Haute Température |
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|---|---|---|
| Page(s) | C9-C5-881 - C9-C5-888 | |
| DOI | https://doi.org/10.1051/jp4:1993991 | |
Proceedings of the 3rd International Symposium on High Temperature Corrosion and Protection of Materials
Actes du 3ème Colloque International sur la Corrosion et la Protection des Matériaux à Haute Température
J. Phys. IV France 03 (1993) C9-C5-881-C9-C5-888
DOI: 10.1051/jp4:1993991
Laboratoire de Céramiques Nouvelles, URA CNRS n° 320, 123, Avenue Albert Thomas, 87060 Limoges Cedex France
© EDP Sciences 1993
Actes du 3ème Colloque International sur la Corrosion et la Protection des Matériaux à Haute Température
J. Phys. IV France 03 (1993) C9-C5-881-C9-C5-888
DOI: 10.1051/jp4:1993991
Oxidation behaviour of a hot isostatically pressed silicon nitride material
L. Themelin, M. Desmaison-Brut and M. BillyLaboratoire de Céramiques Nouvelles, URA CNRS n° 320, 123, Avenue Albert Thomas, 87060 Limoges Cedex France
Abstract
The oxidation behaviour of a dense silicon nitride material containing the minimum
amount of additives was studied. A silicon nitride powder was hot isostatically pressed in
the presence of 0.5 wt% Y2O3 and 0.025 wt%Al2O3. The dense material obtained was oxidized
for 24 hours, in an oxygen atmosphere within the temperature range 1475-1650°C. The high
oxidation resistance of this material may be related to the low amount of sintering aid initially
introduced and consequently to the composition of the grain boundary phase. According to the
temperature, the apparent activation energies for the oxidation processes, ranged from 355 to
680 kJ/mole
© EDP Sciences 1993