| Numéro |
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
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|
|---|---|---|
| Page(s) | C5-359 - C5-362 | |
| DOI | https://doi.org/10.1051/jp4:1993575 | |
Third International Conference on Optics of Excitons in Confined
Le Journal de Physique IV 03 (1993) C5-359-C5-362
DOI: 10.1051/jp4:1993575
Institut d'Electronique et de Microélectronique du Nord, U.M.R. CNRS 9929, Département ISEN, 41 boulevard Vauban, 59046 Lille cedex, France
© EDP Sciences 1993
Le Journal de Physique IV 03 (1993) C5-359-C5-362
DOI: 10.1051/jp4:1993575
Luminescence of silicon crystallites
C. DELERUE, E. MARTIN, J.-F. LAMPIN, G. ALLAN and M. LANNOOInstitut d'Electronique et de Microélectronique du Nord, U.M.R. CNRS 9929, Département ISEN, 41 boulevard Vauban, 59046 Lille cedex, France
Abstract
The physical origin of the red and infrared light emissions from porous silicon are examined. The red band can come from the direct radiative recombination of excitons in silicon crystallites. The infrared emission can be explained by their recombination on silicon dangling bonds. Finally, the influence of the exchange and valley-orbit splittings on the photoluminescence lifetime is analyzed.
© EDP Sciences 1993