| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-87 - C2-93 | |
| DOI | https://doi.org/10.1051/jp4:1991210 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-87-C2-93
DOI: 10.1051/jp4:1991210
Department of Chemical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-87-C2-93
DOI: 10.1051/jp4:1991210
GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6 AND C2H2 AT 873 K
L.-S. HONG, Y. SHIMOGAKI and H. KOMIYAMADepartment of Chemical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Abstract
Silicon carbide (SiC) films were synthesized by the low pressure chemical vapor deposition (LPCVD) method, using Si2H6 and C2H2 as reactant gases at 873 K in a horizontal tubular reactor. Kinetic studies using gas chromatography were used to understand the gas-phase and surface chemistry of Si2H6 in the presence of C2H2. The results showed that the direct reaction of Si2H6 on substrate surface was strongly retarded by C2H2 and that the film formation species was either SiH2 or a gas-phase intermediate derived from Si2H6 and C2H2, having a sticking probability of 0.1.
© EDP Sciences 1991