Table of contents
Le Journal de Physique IV
Vol. 04 No. C6 (Juin 1994)
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
- Temperature scaling concept of MOSFET
p. C6-3
K. Masu and K. Tsubouchi
Abstract | PDF file (511.7 KB) - Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature
p. C6-13
F. Balestra, H. Nakabayashi, M. Tsuno, T. Matsumoto and M. Koyanagi
Abstract | PDF file (321.1 KB) - Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature
p. C6-19
K. Rais, G. Ghibaudo, F. Balestra and M. Dutoit
Abstract | PDF file (168.1 KB) - On the determination of the effective channel length of MOSFETS
p. C6-25
N. Patel, M. Garcia, S. Titcomb and R. Anderson
Abstract | PDF file (191.0 KB) - Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K
p. C6-31
E.A. Gutiérrez-D, L. Deferm and G. Declerck
Abstract | PDF file (268.2 KB) - Hot-carrier degradation of CMOS inverters and ring oscillators at 77K
p. C6-37
J.-T. Hsu, X. Li, P. Aum, D. Chan and C.R. Viswanathan
Abstract | PDF file (175.4 KB) - Low temperature low frequency noise in oxide and reoxidized-nitrided oxide films
p. C6-43
R. Divakaruni, R. Peterson, S. Nystrom and C.R. Viswanathan
Abstract | PDF file (244.1 KB) - DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures
p. C6-51
E. Simoen and C. Claeys
Abstract | PDF file (585.3 KB) - Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature
p. C6-57
J. Jomaah, G. Ghibaudo and F. Balestra
Abstract | PDF file (194.8 KB) - Low temperature operation of silicon-on-insulator inverters
p. C6-63
E. Simoen and C. Claeys
Abstract | PDF file (208.5 KB) - High mobility Si1-xGex PMOS transistors to 5K
p. C6-69
J.A. Scott, E.T. Croke and J.D. Plummer
Abstract | PDF file (742.4 KB) - Hot carrier effects in sub-0.1 µm gate length MOSFETs between room and liquid helium temperatures
p. C6-75
F. Balestra, M. Tsuno, T. Matsumoto, H. Nakabayashi and M. Koyanagi
Abstract | PDF file (312.7 KB) - Low temperature CMOS-compatible JFET's
p. C6-81
J. Vollrath
Abstract | PDF file (203 KB) - Si vertical JFET at low temperatures ; I-V characteristics and low frequency noise
p. C6-87
J.A. Chroboczek, A. Granier, R. Plana and J. Graffeuil
Abstract | PDF file (180.8 KB) - Room and low temperature electrical measurements for the interface characterization of titanium disilicides on silicon from multilayer titanium/silicon structures
p. C6-93
P. Revva, A.G. Nassiopoulos and A. Travlos
Abstract | PDF file (215.9 KB) - Operation of SiGe bipolar technology at cryogenic temperatures
p. C6-101
J.D. Cressler
Abstract | PDF file (549.1 KB) - Low temperature performance of self-aligned "Etched Polysilicon" emitter pseudo-heterojunction bipolar transistors
p. C6-111
G. Giroult-Matlakowski, H. Bousseta, B. Le Tron, D. Dutartre, P. Warren, M.J. Bouzid, A. Nouailhat, P. Ashburn and A. Chantre
Abstract | PDF file (663.7 KB) - High-injection barrier effects in SiGe HBTs operating at cryogenic temperatures
p. C6-117
J.D. Cressler, D.M. Richey, R.C. Jaeger, E.F. Crabbé, J.H. Comfort and J.M.C. Stork
Abstract | PDF file (327.3 KB) - Measurement of the bandgap narrowing in the base of Si homojunction and Si/Si1-xGex heterojunction bipolar transistors from the temperature dependence of the collector current
p. C6-123
P. Ashburn, A. Nouailhat and A. Chantre
Abstract | PDF file (164.3 KB) - Numerical simulation of SiGe HBT's at cryogenic temperatures
p. C6-127
D.M. Richey, J.D. Cressler and R.C. Jaeger
Abstract | PDF file (246.6 KB) - Modelling heavy doping effects for low temperature device simulations
p. C6-133
S. Sokolic and S. Amon
Abstract | PDF file (271.0 KB) - Tunable infrared photoemission sensor on silicon using SiGe/Si and silicide/Si epitaxial layers
p. C6-139
I. Sagnes, C. Renard and P.A. Badoz
Abstract | PDF file (327.0 KB) - GaAs JFETs intended for deep cryogenic VLWIR readout electronics
p. C6-147
T.J. Cunningham and E.R. Fossum
Abstract | PDF file (219.3 KB) - Low temperature low voltage operation of HEMTs on InP
p. C6-153
A. Sylvestre, P. Crozat, R. Adde, A. De Lustrac and Y. Jin
Abstract | PDF file (256.5 KB) - GaAs MESFETs and monolithic circuits in cryogenic environments
p. C6-159
D.V. Camin, G. Pessina and E. Previtali
Abstract | PDF file (666.2 KB) - Collapse and large signal modelling of GaAs field effect transistors at 77 K
p. C6-165
J. Verdier, O. Llopis, J.M. Dienot, R. Plana, Ph. Andre and J. Graffeuil
Abstract | PDF file (249.8 KB) - High electric field transport effects on low temperature operation of pseudomorphic HEMTs
p. C6-171
F. Aniel, P. Crozat, A. De Lustrac, R. Adde and Y. Jin
Abstract | PDF file (299.3 KB) - Recent developments in low temperature infrared detectors
p. C6-177
Ch. Lucas, D. Amingual and J.P. Chatard
Abstract | PDF file (277.0 KB) - High Tc superconductive thin films on semiconductor substrates
p. C6-185
P. Lecoeur, B. Blanc-Guillon, H. Murray and B. Mercey
Abstract | PDF file (130.8 KB) - A 12 GHz oscillator based on a GaAs HEMT integrated to a HTS resonator
p. C6-189
G. Borghs, J. DeBoeck, I. Francois, D. Chambonnet, C. Belouet, Y. Crosnier, J.C. Carru, D. Chauvel, L. Arnaud, H. Boucher, J.C. Villegier, S. Nicoletti, L. Correra and J. Jiménez
Abstract | PDF file (771.6 KB) - Several alternative approaches to the manufacturing of HTS Josephson junctions
p. C6-197
J.C. Villegier, H. Boucher, A. Ghis, M. Levis, L. Mechin, H. Moriceau, F. Pourtier, M. Vabre, S. Nicoletti and L. Correra
Abstract | PDF file (36.00 KB) - Measurement of the I-V characteristics of superconducting dipoles : automatic compensation of low frequency drift
p. C6-199
E. Lesquey, F. Gire, C. Dolabdjian, M.L.Chok Sing and R. Robbes
Abstract | PDF file (206.2 KB) - Biepitaxial Josephson junctions and SuFET technology for the preparation of HTS-JoFETs
p. C6-205
K. Petersen, A. Walkenhorst, C. Stölzel, W. Wilkens, C. Krimmer, J. Söllner, H.W. Grueninger, R. Fischer, M. Schmitt, T. Becherer and H. Adrian
Abstract | PDF file (282.5 KB) - Penetration depth extraction in high temperature superconducting microwave transmission lines
p. C6-211
D. Ladret, B. Cabon, J. Chilo, P. Xavier, J. Richard and O. Buisson
Abstract | PDF file (464.4 KB) - High-Tc-based Josephson-junctions and SQUIDs by mechanically induced growth disorder
p. C6-217
M. Schmitt, A. Hadish, P. Wagner, Th. Becherer and H. Adrian
Abstract | PDF file (341.3 KB) - Preparation of small-area Al/AlOx/Al tunnel junctions in a self-aligned in-line technology and observation of the Coulomb blockade
p. C6-223
M. Götz, P. Thieme, K. Blüthner, W. Krech, D. Born, S. Götz, H.-J. Fuchs, E.-B. Kley, Th. Wagner and G. Eska
Abstract | PDF file (272.6 KB) - Physics of the long range proximity effect
p. C6-229
I.A. Devyatov and M. Yu. Kupriyanov
Abstract | PDF file (267.2 KB) - New elements for analysis of series arrays of superconducting junctions for submillimeter heterodyne detection
p. C6-237
P. Febvre, B. Leridon, R. Maoli, S. George, P. Feautrier, G. Ruffié, W.R. McGrath and G. Beaudin
Abstract | PDF file (362.2 KB) - Josephson voltage standard microwave circuit driven at 10 GHz
p. C6-243
H.-G. Meyer, H.-J. Köhler, G. Wende, A. Chwala, E. Vollmer, U. Stumper, K. Blüthner and P. Weber
Abstract | PDF file (200.2 KB) - Composite bolometer based on high temperature superconducting Bi2Sr2CaCu2O8+x crystals for application in the far infrared
p. C6-249
M. Epifani, P. Mancino, G. Balestrino, M. Marinelli, E. Milani, M. Montuori, A. Ruosi and R. Vaglio
Abstract | PDF file (228.7 KB) - Magnetometers based on (double) relaxation oscillation SQUIDs
p. C6-255
M.J. van Duuren, Y.H. Lee, D. J. Adelerhof, J. Flokstra and H. Rogalla
Abstract | PDF file (323.9 KB) - Processing of DC SQUIDs for radiofrequency amplification
p. C6-261
R. Chicault, M.C. Cyrille, Y. Berthier, J.C. Villégier, F. Pourtier, H. Moriceau and S. Nicoletti
Abstract | PDF file (572.7 KB) - A 350 to 700 GHz open structure SIS receiver for submm. radioastronomy
p. C6-267
H. Rothermel, K.H. Gundlach and M. Voss
Abstract | PDF file (706.1 KB) - Quasiparticle lifetimes and tunneling times in an SS'IS''S tunnel junction detector
p. C6-273
A.A. Golubov, E. P. Houwnan, V.M. Krasnov, J. G. Gijsbertsen, J. Flokstra, H. Rogalla, J.B. le Grand and P.A.J. de Korte
Abstract | PDF file (268.7 KB) - Modelling of fluxon dynamics in stacked Josephson tunnel junctions
p. C6-279
A.V. Ustinov, A. Petraglia and N.F. Pedersen
PDF file (73.46 KB)
© EDP Sciences 1994