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Le Journal de Physique IV

Vol. 02 No. C2 (Septembre 1991)

Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

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• NUMERICAL MODELLING OF CVD PROCESSES AND EQUIPMENT     p. C2-3
  C . WERNER
  Abstract | PDF file (2.992 MB)



• THE MODELING OF LPCVD IN SINGLE-WAFER REACTORS AS A TOOL FOR PROCESS OPTIMIZATION AND EQUIPMENT DESIGN     p. C2-19
  C.R. KLEIJN
  Abstract | PDF file (1.480 MB)



• ANGULAR DISTRIBUTION OF DESORBED MOLECULES     p. C2-33
  X.W. LI, B.Z. GUO, S.H. LIN and H. MA
  Abstract | PDF file (192.7 KB)



• 2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR     p. C2-39
  Y. WANG, C. CHAUSSAVOINE and F. TEYSSANDIER
  Abstract | PDF file (1.023 MB)



• CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD     p. C2-47
  L.J. de LEGÉ and M. HENDRIKS
  Abstract | PDF file (266.6 KB)



• MECHANISM OF STEP COVERAGE FORMATION OF SiO₂ FILMS FROM TEOS AND EFFECTS OF GAS PHASE ADDITIVES STUDIED BY MICRO/MACROCAVITY METHOD     p. C2-55
  Y. EGASHIRA, T. SORITA, S. SHIGA, K. IKUTA and H. KOMIYAMA
  Abstract | PDF file (693.0 KB)



• SILICON DEPOSITION FROM DISILANE : EXPERIMENTAL STUDY AND MODELLING     p. C2-63
  M. GUEYE, E. SCHEID, P. TAURINES, P. DUVERNEUIL, D. BIELLE-DASPET and J.P. COUDERC
  Abstract | PDF file (1.420 MB)



• A NOVEL WAFER CAGE FOR BETTER UNIFORMITY OF PHOSPHORUS DOPED SILICON LAYERS : EXPERIMENTAL STUDY AND MODELLING     p. C2-71
  C. AZZARO, P. DUVERNEUIL and J.P. COUDERC
  Abstract | PDF file (1.067 MB)



• AN UNDERSTANDING OF IN SITU BORON DOPED POLYSILICON FILMS BY CHARACTERIZATION AND SIMULATION     p. C2-79
  C. AZZARO, E. SCHEID, D. BIELLE-DASPET, P. DUVERNEUIL and P. BOUDRE
  Abstract | PDF file (236.5 KB)



• GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si₂H₆ AND C₂H₂ AT 873 K     p. C2-87
  L.-S. HONG, Y. SHIMOGAKI and H. KOMIYAMA
  Abstract | PDF file (647.8 KB)



• THE REACTIVITY AND MOLECULAR SIZE OF FILM PRECURSORS DURING CHEMICAL VAPOR DEPOSITION OF WSi_x     p. C2-95
  Y. SHIMOGAKI, T. SAITO, F. TADOKORO and H. KOMIYAMA
  Abstract | PDF file (2.113 MB)



• NUMERICAL MODEL OF A FLUIDIZED BED REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION-ESTIMATION OF CVD AND FINES FORMATION     p. C2-103
  T. KIMURA and T. KOJIMA
  Abstract | PDF file (364.3 KB)



• TRANSPORT PHENOMENA AND REACTOR DESIGN FOR CHROMIUM CARBIDE DEPOSITION     p. C2-111
  M. PONS, M. SANCANDI and J.F. NOWAK
  Abstract | PDF file (682.5 KB)



• AN EXPERIMENTAL KINETIC STUDY OF BORON NITRIDE CVD FROM BF₃-NH₃-Ar MIXTURES     p. C2-119
  S. PROUHET, A. GUETTE and F. LANGLAIS
  Abstract | PDF file (683.9 KB)



• GAS FLOW SIMULATION OF CHEMICAL VAPOUR INFILTRATION IN A VERTICAL HOT-WALL REACTOR     p. C2-127
  M. SASAKI, A. OHKUBO and T. HIRAI
  Abstract | PDF file (910.8 KB)



• ANALYSIS OF TRANSPORT PHENOMENA IN THE COATING OF FIBERS BY CVD     p. C2-135
  J.H. SCHOLTZ, J.E. GATICA, H.J. VILJOEN and V. HLAVACEK
  Abstract | PDF file (1.517 MB)



• THE CHEMICAL VAPOUR IMPREGNATION OF POROUS SOLIDS. MODELLING OF THE CVI-PROCESS     p. C2-143
  E. FITZER, W. FRITZ and G. SCHOCH
  Abstract | PDF file (934.6 KB)



• IN - SITU OPTICAL CHARACTERISATION OF CVD PROCESSES     p. C2-153
  W. RICHTER and P. KURPAS
  Abstract | PDF file (39.46 KB)



• SOME INSIGHT INTO THE NATURE OF THE SURFACE CHEMICAL PROCESSES INVOLVED IN THE MOVPE GROWTH OF GaAs FROM ARSINE AND TRIMETHYL- OR TRIETHYL-GALLIUM     p. C2-155
  M.E. PEMBLE, D.S. BUHAENKO, H. PATEL, A. STAFFORD and A.G. TAYOR
  Abstract | PDF file (1.198 MB)



• REFLECTION-ABSORPTION IR SPECTROSCOPY AS AN IN-SITU PROBE OF THE SURFACE CHEMISTRY OF SEMICONDUCTOR GROWTH INTERMEDIATES : THE ADSORPTION OF TRIMETHYLGALLIUM AT GaAs (100) SURFACES AT 300 K     p. C2-167
  H. PATEL and M.E. PEMBLE
  Abstract | PDF file (701.7 KB)



• EXPERIMENTAL STUDY AND NUMERICAL SIMULATION OF HYDRODYNAMICS AND HEAT TRANSFER IN A COLD-WALL CVD REACTOR     p. C2-175
  H. CHEHOUANI, B. ARMAS, C. COMBESCURE, S . BENET and S. BRUNET
  Abstract | PDF file (983.5 KB)



• IN SITU ELLIPSOMETRY, A MEASUREMENT TECHNIQUE FOR DYNAMIC FILM CHARACTERIZATION AND PROCESS DEVELOPMENT     p. C2-183
  M. TAMME, R. KAMILLI, P. PADUSCHEK, P. MONTGOMERY and S. ILLSLEY
  Abstract | PDF file (17.63 KB)



• ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY     p. C2-185
  P.A.C. GROENEN, J.G.A. HÖLSCHER and H.H. BRONGERSMA
  Abstract | PDF file (692.9 KB)



• THE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES     p. C2-193
  W. AHMED, J.S. FOORD, N.K. SINGH and R.D. PILKINGTON
  Abstract | PDF file (255.1 KB)



• DEPOSITION OF CUBIC BORON MONOPHOSPHIDE FROM BBr₃ AND PBr₃ : A REACTION MECHANISM     p. C2-201
  E.M. KELDER, P.J. VAN DER PUT, J.G.M. BECHT and J. SCHOONMAN
  Abstract | PDF file (346.9 KB)



• SYNTHESIS AND STRUCTURE OF NONSTOICHIOMETRIC δ-NbN_1+y FILMS     p. C2-209
  E.V. SHALAEVA, M.V. KUZNETSOV, R.S. BARYSHEV and B.V. MITROFANOV
  Abstract | PDF file (1.491 MB)



• NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES     p. C2-217
  H.B. de BREE, M.H. HAAFKENS, M.M. MICHORIUS and L.R. WOLFF
  Abstract | PDF file (1.092 MB)



• INFLUENCE OF H₂ PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE     p. C2-225
  A. FIGUERAS, R. RODRIGUEZ-CLEMENTE, S. GARELIK, J. SANTISO, B . ARMAS, C. COMBESCURE, A. MAZEL, Y. KIHN and J. SÉVELY
  Abstract | PDF file (1.357 MB)



• A STUDY OF α-Fe₂O₃ ULTRAFINE PARTICLE FILMS     p. C2-233
  D. GUORUI, C. LIHUA, Y. BAILIANG and L. MINGDENG
  Abstract | PDF file (1.012 MB)



• METALORGANIC CHEMICAL VAPOR DEPOSITION : EXAMPLES OF THE INFLUENCE OF PRECURSOR STRUCTURE ON FILM PROPERTIES     p. C2-243
  K.F. JENSEN, A. ANNAPRAGADA, K.L. HO, J.-S. HUH, S. PATNAIK and S. SALIM
  Abstract | PDF file (440.6 KB)



• METALORGANIC PRECURSORS FOR SEMICONDUCTORS REQUIREMENTS AND RECENT DEVELOPMENTS     p. C2-253
  A.C . JONES
  Abstract | PDF file (342.0 KB)



• LOW PRESSURE MOCVD OF COPPER BASED COMPOUNDS FOR PHOTOVOLTAIC APPLICATIONS     p. C2-263
  R.D. PILKINGTON, P.A. JONES, W. AHMED, R.D. TOMLINSON, A. E. HILL, J. J. SMITH and R. NUTTALL
  Abstract | PDF file (303.9 KB)



• NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION     p. C2-271
  J.A.T. NORMAN, B.A. MURATORE, P.N. DYER, D.A. ROBERTS and A.K. HOCHBERG
  Abstract | PDF file (1.033 MB)



• THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER     p. C2-279
  B. LECOHIER, J.-M. PHILIPPOZ, B. CALPINI, T. STUMM and H. VAN DEN BERGH
  Abstract | PDF file (723.9 KB)



• THERMODYNAMIC MODELING OF MOCVD OF THE SUPERCONDUCTING PHASE IN THE Bi-Sr-Ca-Cu-O SYSTEM : INFLUENCE OF METAL PRECURSOR AND OXYGEN SOURCE     p. C2-287
  A. HÅRSTA and J.-O. CARLSSON
  Abstract | PDF file (1.355 MB)



• DEPOSITION OF Y-Ba-Cu-O-FILMS BY MO-CVD USING A NOVEL BARIUM PRECURSOR     p. C2-295
  C.I.M.A. SPEE, E.A. VAN DER ZOUWEN-ASSINK, K. TIMMER, A. MACKOR and H.A. MEINEMA
  Abstract | PDF file (1.333 MB)



• LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TIN OXIDE THIN FILMS FROM AN ORGANOMETALLIC COMPOUND. APPLICATION TO GAS DETECTION     p. C2-303
  C. PIJOLAT, L. BRUNO and R. LALAUZE
  Abstract | PDF file (1.817 MB)



• MOCVD OF TANTALUM PENTOXIDE FOR LARGE-AREA ULSI CIRCUIT WAFERS     p. C2-311
  W. KERN, A. CHEN and N. SANDLER
  Abstract | PDF file (550.2 KB)



• GROWTH KINETICS, CRYSTAL STRUCTURE, AND MORPHOLOGY OF OMVPE-GROWN HOMOEPITAXIAL CdTe     p. C2-319
  D.W. SNYDER, P.J. SIDES, E.I. KO and S. MAHAJAN
  Abstract | PDF file (735.2 KB)



• COMPARATIVE STUDY OF Ge_xC_x-1 FILMS PREPARED BY MOCVD FROM TETRAETHYLGERMANIUM AND TETRAVINYLGERMANIUM     p. C2-327
  M'B. AMJOUD, A. REYNES, R. MORANCHO, P. MAZEROLLES and R. CARLES
  Abstract | PDF file (634.6 KB)



• GENERATION OF THREE-DIMENSIONAL FREE-STANDING MICRO-OBJECTS BY LASER CHEMICAL PROCESSING     p. C2-337
  O. LEHMANN and M. STUKE
  Abstract | PDF file (1.133 MB)



• PLASMAS : SOURCES OF EXCITED, DISSOCIATED AND IONIZED SPECIES. CONSEQUENCES FOR CHEMICAL VAPOR DEPOSITION (CVD) AND FOR SURFACE TREATMENT     p. C2-343
  A. GICQUEL and Y. CATHERINE
  Abstract | PDF file (2.860 MB)



• SURFACE MECHANISMS IN THE UVCVD OF SiO₂ FILMS     p. C2-357
  C. LICOPPE, C. MERIADEC, J. FLICSTEIN, Y.I. NISSIM, E. PETIT and J.M. MOISON
  Abstract | PDF file (293.0 KB)



• PREPARATION OF SiC FILMS BY PHOTOCHEMICAL VAPOUR DEPOSITION USING A D₂ LAMP     p. C2-365
  S. MOTOJIMA and S. MANO
  Abstract | PDF file (208.7 KB)



• LASER INDUCED DIRECT WRITING OF ALUMINIUM     p. C2-373
  V. SHANOV, B. IVANOV and C. POPOV
  Abstract | PDF file (806.1 KB)



• KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD     p. C2-381
  W. ZHANG, M. LELOGEAIS and M. DUCARROIR
  Abstract | PDF file (895.5 KB)



• COPPER AND COPPER OXIDE THIN FILMS OBTAINED BY METALORGANIC MICROWAVE PLASMA CVD     p. C2-389
  B. WISNIEWSKI, J. DURAND and L. COT
  Abstract | PDF file (783.7 KB)



• PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS     p. C2-397
  K.-T. RIE, J. WÖHLE and A. GEBAUER
  Abstract | PDF file (1.381 MB)



• INFLUENCE OF EXCITATION FREQUENCY ON ORIENTED (10(-1)0) GROWTH OF ALUMINIUM NITRIDE THIN FILMS BY PECVD     p. C2-405
  N. AZEMA, J. DURAND, R. BERJOAN, J.L. BALLADORE and L. COT
  Abstract | PDF file (1.337 MB)



• PLASMA DEPOSITION OF SILICON NITRIDE     p. C2-413
  C. FAKIH, R.S. BES, B. ARMAS and D. THENEGAL
  Abstract | PDF file (544.2 KB)



• DOWNSTREAM MICROWAVE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION OF SiO₂ USING O₂/SiH₄ AND N₂O/SiH₄ MIXTURES     p. C2-421
  H. DEL PUPPO, T. SINDZINGRE, L. PECCOUD and J. DESMAISON
  Abstract | PDF file (729.6 KB)



• DEVELOPMENT OF A PLASMA JETTING FLUIDIZED BED REACTOR     p. C2-429
  T. KOJIMA, M. MATSUKATA, M. ARAO, M. NAKAMURA and Y. MITSUYOSHI
  Abstract | PDF file (540.1 KB)



• PLANARIZED INTERMETAL DIELECTRIC DEPOSITED BY DECR CVD     p. C2-437
  A. TISSIER, J. KHALLAAYOUNE, A. GERODOLLE and B. HUIZING
  Abstract | PDF file (956.6 KB)



• SAFETY AND ENVIRONMENTAL ASPECTS OF CVD     p. C2-447
  R.H. WALLING and R.H. MOSS
  Abstract | PDF file (29.43 KB)



• CVD EXHAUST - SAFETY AND ENVIRONMENTAL SANITY     p. C2-449
  M.L. HAMMOND
  Abstract | PDF file (300.9 KB)



• USE OF THE HAZOP ANALYSIS FOR EVALUATION OF CVD REACTORS     p. C2-459
  W.W. CRAWFORD, J.R. ZUBER and W.R. KNOLLE
  Abstract | PDF file (337.2 KB)



• CVD OF SiC IN LARGE COATING VESSELS     p. C2-467
  K. BRENNFLECK and H. REICH
  Abstract | PDF file (2.529 MB)



• OPTIMUM PROCESS CONDITIONS FOR STABLE AND EFFECTIVE OPERATION OF A FLUIDIZED BED CVD REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION     p. C2-475
  T. KOJIMA and O. MORISAWA
  Abstract | PDF file (900.8 KB)



• CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR     p. C2-483
  M. MATSUKATA, T. ODAGIRI and T. KOJIMA
  Abstract | PDF file (853.7 KB)



• CHEMICAL VAPOUR INFILTRATION (CVI) OF SILICON CARBIDE FIBRE PREFORMS     p. C2-491
  R. LUNDBERG, L. PEJRYD and G. LÖÖF
  Abstract | PDF file (1.677 MB)



• PROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS     p. C2-497
  S. ICHIJO, K. TAMURA, T. TAKANO, A. NAKAO and T. HIRAHARA
  Abstract | PDF file (3.124 MB)



• HIGH QUALITY OXIDES FOR LARGE AREA DISPLAYS     p. C2-505
  L.M. JOHNSON, M. SAUNDERS and D.B. MEAKIN
  Abstract | PDF file (15.81 KB)



• CHEMICAL VAPOUR DEPOSITON - A REVIEW OF 25 YEARS EXPERIENCE     p. C2-509
  E. FITZER
  Abstract | PDF file (4.431 MB)



• HIGH-TC-SUPERCONDUCTORS PREPARED BY CVD     p. C2-539
  F. SCHMADERER, R. HUBER, H. OETZMANN and G. WAHL
  Abstract | PDF file (1.126 MB)



• CVD COATING OF CERAMIC LAYERS ON CERAMIC CUTTING TOOL MATERIALS     p. C2-549
  R. PORAT
  Abstract | PDF file (840.7 KB)



• GRAIN REFINEMENT OF CVD TiC LAYERS BY AlCl₃, ZrCl₄ AND BCl₃ IMPURITIES     p. C2-557
  A. OSADA, M. DANZINGER, R. HAUBNER and B. LUX
  Abstract | PDF file (1.164 MB)



• COMPOSITION OSCILLATIONS IN HARD MATERIAL LAYERS DEPOSITED FROM THE VAPOUR PHASE     p. C2-563
  K. BARTSCH, A. LEONHARDT and E. WOLF
  Abstract | PDF file (757.1 KB)



• INFLUENCE OF CH₄ AND Ar ON THE MORPHOLOGIES OF Al₂O₃ - CVD COATINGS     p. C2-571
  M. DANZINGER, J. PENG, R. HAUBNER and B. LUX
  Abstract | PDF file (1.333 MB)



• INFLUENCE OF ETCHING THE TiC UNDERLAYER WITH CH₄/AlCl₃/H₂ ON THE CVD FORMATION OF KAPPA-Al₂O₃     p. C2-579
  M. DANZINGER, R. HAUBNER and B. LUX
  Abstract | PDF file (791.9 KB)



• CHEMICAL VAPOUR DEPOSITION OF Al-CONTAINING TiC - AND Ti(O,C) - HARD COATINGS     p. C2-587
  D. SELBMANN, A. LEONHARDT and E. WOLF
  Abstract | PDF file (669.9 KB)



• CHEMICAL VAPOR PRECIPITATION OF SUBMICRON TITANIUM NITRIDE POWDER     p. C2-593
  J.P. DEKKER, P.J. VAN DER PUT, R.R. NIEUWENHUIS, H.J. VERINGA and J. SCHOONMAN
  Abstract | PDF file (535.3 KB)



• ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL     p. C2-601
  M. LELOGEAIS, M. DUCARROIR and R. BERJOAN
  Abstract | PDF file (787.3 KB)



• THE EFFECTS OF METALLIC INTERLAYER FORMATION ON THE ADHESION PROPERTIES OF PACVD - TiN FILMS ON TOOL STEEL     p. C2-609
  S.B. KIM, C.B. IN, S.K. CHOI and S.S. CHUN
  Abstract | PDF file (564.7 KB)



• DEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE     p. C2-617
  J.G.M. BECHT, A. BATH, E. HENGST, P.J. VAN DER PUT and J. SCHOONMAN
  Abstract | PDF file (981.0 KB)



• TITANOCENE-DICHLORIDE AS A METALORGANIC SOURCE FOR TITANIUM CARBIDE     p. C2-625
  J. SLIFIRSKI, G. HUCHET and F. TEYSSANDIER
  Abstract | PDF file (743.1 KB)



• ON THE OPTIMIZATION OF THE MICROSTRUCTURE AND THE ADHERENCE OF TiC/TiN COATINGS DEPOSITED AT MODERATE TEMPERATURE FOR MILLING APPLICATIONS     p. C2-633
  B. DROUIN, L. VANDENBULCKE, J.P. PITON and R. HERBIN
  Abstract | PDF file (2.462 MB)



• CORROSION OF CHEMICALLY VAPOUR DEPOSITED TITANIUM CARBIDE ON AN INERT SUBSTRATE     p. C2-641
  A. DELBLANC BAUER and J.-O. CARLSSON
  Abstract | PDF file (335.6 KB)



• FABRICATION AND EVALUATION OF SiC/C FUNCTIONALLY GRADIENT MATERIAL     p. C2-649
  M. SASAKI and T. HIRAI
  Abstract | PDF file (1.337 MB)



• PROTECTION AGAINST OXIDATION OF C/SiC COMPOSITES BY CHEMICAL VAPOUR DEPOSITION OF TITANIUM DIBORIDE : DEPOSITION KINETICS AND OXIDATION BEHAVIOUR OF FILMS PREPARED FROM TiCl₄/BCl₃/H₂ MIXTURES     p. C2-657
  C. COURTOIS, J. DESMAISON and H. TAWIL
  Abstract | PDF file (981.2 KB)



• CHEMICAL VAPOUR DEPOSITION OF THE Al-O-N SYSTEM     p. C2-665
  B. ASPAR, B. ARMAS, C. COMBESCURE and D. THENEGAL
  Abstract | PDF file (683.2 KB)



• NEW COMPOUNDS OBTAINED BY LPCVD IN THE B-C-N CHEMICAL SYSTEM     p. C2-673
  F. SAUGNAC, F. TEYSSANDIER and A. MARCHAND
  Abstract | PDF file (316.6 KB)



• LPCVD SiC COATINGS ON UNIDIRECTIONAL CARBON FIBRE-YARNS : APPLICATION TO ALUMINIUM MATRIX COMPOSITES     p. C2-681
  M.H. VIDAL-SÉTIF and J.L. GÉRARD
  Abstract | PDF file (1.704 MB)



• DEVELOPMENT OF HIGH DENSITY FIBER REINFORCED SILICON CARBIDE FCVI COMPOSITES     p. C2-689
  Y.G. ROMAN, D.P. STINTON and T.M. BESMANN
  Abstract | PDF file (766.0 KB)



• THE CVD OF TiB₂ PROTECTIVE COATING ON SiC MONOFILAMENT FIBRES     p. C2-697
  K.-L. CHOY and B. DERBY
  Abstract | PDF file (1.656 MB)



• CHEMICAL VAPOR INFILTRATION OF 3D FIBROUS CARBON PREFORMS BY ZIRCONIUM CARBIDE     p. C2-705
  M. NADAL and F. TEYSSANDIER
  Abstract | PDF file (2.246 MB)



• THE Ba-PROBLEM IN CVD-YBa₂ Cu₃ O_7-[MATH] HT_C SUPERCONDUCTORS     p. C2-713
  E. FITZER, H. OETZMANN, F. SCHMADERER and G. WAHL
  Abstract | PDF file (1.207 MB)



• PREPARATION OF YBa₂Cu₃O_7-x FILMS BY SPRAY PYROLYSIS     p. C2-721
  J. PENG, M. DANZINGER, R. HAUBNER and B. LUX
  Abstract | PDF file (936.6 KB)



• GROWTH MECHANISM AND STRUCTURE PECULIARITIES OF TUNGSTEN-RHENIUM COATINGS     p. C2-729
  Y.V. LAKHOTKIN and R.V. KUKUSHKIN
  Abstract | PDF file (744.7 KB)



• INFLUENCE OF GAS PHASE COMPOSITION ON THE FORMATION OF Ti-Si COATINGS ON NIOBIUM     p. C2-735
  M.S. TSIRLIN and S.U. RYBAKOV
  Abstract | PDF file (219.3 KB)



• THE SELECTIVE EPITAXIAL GROWTH OF SILICON     p. C2-745
  M.R. GOULDING
  Abstract | PDF file (6.338 MB)



• EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD     p. C2-779
  D.W. McNEILL, Y. LIANG, J.H. MONTGOMERY, H.S. GAMBLE and B.M. ARMSTRONG
  Abstract | PDF file (755.2 KB)



• LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS     p. C2-787
  R. KIRCHER, M. FURUNO, J. MUROTA and S. ONO
  Abstract | PDF file (718.8 KB)



• LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT     p. C2-795
  J. MUROTA, M. KATO, R. KIRCHER and S. ONO
  Abstract | PDF file (1.233 MB)



• CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD     p. C2-803
  J. MUROTA, M. SAKURABA, N. MIKOSHIBA and S. ONO
  Abstract | PDF file (631.8 KB)



• UHV CHEMICAL VAPOUR DEPOSITION OF UNDOPED AND IN-SITU DOPED POLYSILICON FILMS     p. C2-809
  W. AHMED, R.D. PILKINGTON and D.B. MEAKIN
  Abstract | PDF file (308.0 KB)



• CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES     p. C2-817
  M. SARRET, A. LIBA, O. BONNAUD, M. MOKHTARI and B. FORTIN
  Abstract | PDF file (209.1 KB)



• GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD     p. C2-823
  F.H. RUDDELL, B.M. ARMSTRONG and H.S. GAMBLE
  Abstract | PDF file (715.8 KB)



• LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE     p. C2-831
  H. KANOH, O. SUGIURA, S. FUJIOKA, Y. ARAMAKI, T. HATTORI and M. MATSUMURA
  Abstract | PDF file (337.5 KB)



• PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES     p. C2-839
  H. TREICHEL, R. BRAUN, Z. GABRIC, O. SPINDLER and A. GSCHWANDTNER
  Abstract | PDF file (2.682 MB)



• REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS     p. C2-847
  S.E. ALEXANDROV and A.Y. KOVALGIN
  Abstract | PDF file (29.90 KB)



• A STUDY ON THE THERMODYNAMICS AND KINETICS OF TUNGSTEN DEPOSITION BY WF₆ AND GeH₄     p. C2-849
  C.A. VAN DER JEUGD, G.J. LEUSINK, G.C.A.M. JANSSEN and S. RADELAAR
  Abstract | PDF file (375.5 KB)



• SELECTIVE R.T.L.P.C.V.D. OF TUNGSTEN BY SILANE REDUCTION ON PATTERNED PPQ/Si WAFERS     p. C2-857
  A. BOUTEVILLE, T. CHARRIER, J.C. REMY, J. PALLEAU and J. TORRES
  Abstract | PDF file (924.3 KB)



• CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIR SILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY     p. C2-865
  K.A. GESHEVA, V. ABROSIMOVA and G.D. BESHKOV
  Abstract | PDF file (581.7 KB)



• PROCESSING OF WSi₂ FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM IN SITU CHLORINATION OF METAL     p. C2-873
  E. BLANQUET, N. THOMAS, P. SURYANARAYANA, C. VAHLAS, C. BERNARD and R. MADAR
  Abstract | PDF file (1.084 MB)



• CVD OF COPPER USING CuCl AS PRECURSOR     p. C2-881
  C. LAMPE-ÖNNERUD, A. HÅRSTA and U. JANSSON
  Abstract | PDF file (2.323 MB)



• CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON     p. C2-889
  H. DALLAPORTA, Z. HAMMADI, R. PIERRISNARD and A. CROS
  Abstract | PDF file (1.242 MB)



• MICROENGINEERING - THE NEW APPLICATION OF CHEMICAL VAPOR DEPOSITION     p. C2-897
  P.B. GRABIEC and J.M. LYSKO
  Abstract | PDF file (394.9 KB)



• MOCVD - THE ROUTE TO HIGH PERFORMANCE COMPOUND SEMICONDUCTOR OPTOELECTRONIC DEVICES     p. C2-905
  R.J.M. GRIFFITHS
  Abstract | PDF file (28.59 KB)



• DIAMOND CHEMICAL VAPOUR DEPOSITION     p. C2-907
  P.K. BACHMANN, D. LEERS and D.U. WIECHERT
  Abstract | PDF file (1.078 MB)



• EVALUATING THE INFLUENCE OF GROWTH PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS     p. C2-915
  C. JOHNSTON, C.F. AYRES and P.R. CHALKER
  Abstract | PDF file (1.100 MB)



• INFLUENCE OF THE FILAMENT MATERIAL ON LOW-PRESSURE HOT-FILAMENT CVD DIAMOND DEPOSITION     p. C2-923
  S. OKOLI, R. HAUBNER and B. LUX
  Abstract | PDF file (2.767 MB)



• HIGH TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS     p. C2-931
  C. JOHNSTON, A. CROSSLEY, A.M. JONES, P.R. CHALKER, F.L. CULLEN and I.M. BUCKLEY-GOLDER
  Abstract | PDF file (901.7 KB)



• ELECTRON SIGNIFICANCE TO DIAMOND SYNTHESIS IN PLASMA ENHANCED CVD PROCESS     p. C2-939
  S.F. MITURA
  Abstract | PDF file (986.6 KB)



• ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION (APMOCVD) FOR THE GROWTH OF ZnSe EPILAYERS ON (100)-GaAs SUBSTRATES USING DIETHYL-ZINC (DEZn) AND HYDROGEN SELENIDE (H₂Se)     p. C2-945
  A. BOUMAZA, H.M. YATES, L. JAMES, I.A. PATTERSON, D.J. COLE-HAMILTON and J.O. WILLIAMS
  Abstract | PDF file (252.1 KB)



• HETEROEPITAXIAL GROWTH OF TiO₂, VO₂, AND TiO₂/VO₂ MULTILAYERS BY MOCVD     p. C2-953
  H.L.M. CHANG, Y. GAO, J. GUO, C.M. FOSTER, H. YOU, T.J. ZHANG and D.J. LAM
  Abstract | PDF file (2.212 MB)



• STUDIES OF In₂O₃ - Sn FILMS GROWN BY MOCVD     p. C2-961
  W. LUO, P. REN, C. TAN and Z. TAN
  Abstract | PDF file (20.51 KB)



• Sb (P, As OR F) - DOPED SnO₂ FILMS PREPARED BY MOCVD     p. C2-962
  W. LUO, C. TAN, P. REN and Z. TAN
  Abstract | PDF file (24.70 KB)



• A STUDY OF GAS SENSING PROPERTIES OF OXIDE MULTILAYER THIN FILMS     p. C2-963
  D. GUORUI
  Abstract | PDF file (1.148 MB)

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© EDP Sciences 1991