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Journal de Physique Archives > Journal de Physique IV
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Revue J. Phys. IV France
Volume 04, Numéro C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
Page(s) C9-199 - C9-202
DOI 10.1051/jp4:1994935

Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation

J. Phys. IV France 04 (1994) C9-199-C9-202

DOI: 10.1051/jp4:1994935

The electronic structure of the InP(110) surface

Y. Khazmi, P.O. Nilsson and J. Kanski

Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden


Abstract
As part of an extensive project on the surface electronic structure of semiconductor compounds we report here on an experimental and theoretical study of the InP(110) surface. By comparison of angle-resolved photoemission data with results from empirical tight-binding calculations it has been possible to identify electronic surface related features and specify their origin.



© EDP Sciences 1994


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