Issue J. Phys. IV France Volume 04, Number C9, Novembre 1994 Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation Page(s) C9-113 - C9-116 DOI 10.1051/jp4:1994915

Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation

J. Phys. IV France 04 (1994) C9-113-C9-116
DOI: 10.1051/jp4:1994915

Glass forming tendency in Ga-Ge-S glasses : a structural approach

N. Chbani¹, A.M. Loireau-Lozac'h¹, F. Keller² and S. Bénazeth<sup>3, 4

1</sup>  Laboratoire de Chimie Physique Générale et Minérale, Faculté de Pharmacie, Université Paris V, 4 Avenue de l'Observatoire, 75270 Paris, France
²  Laboratoire de Biomathématiques et Physique, Faculté de Pharmacie, Université Paris V, 4 Avenue de l'Observatoire, 75270 Paris, France
³  Laboratoire LURE, Université Paris-Sud, 91405 Orsay, France
⁴  Laboratoire de Chimie Physique Minérale et Bioinorganique, Faculté de Pharmacie, Université Paris-Sud, 92296 Chatenay-Malabry, France

Abstract
We have studied by EXAFS glasses that belong to the Ga₂S₃-GeS₂ line around Ga and Ge K edges. Both tetrahedral GaS₄ and GeS₄ units are evidenced and low temperature measurements reveal ordering around germanium atoms up to 4 Å.

© EDP Sciences 1994

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