C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 273-277
Thermal stability of Gd2O3/Si(100) interfacial transition layerH. Nohira1, T. Yoshida1, H. Okamoto1, S. Shinagawa1, W. Sakai2, K. Nakajima2, M. Suzuki2, K. Kimura2, Ng Jin Aun3, Y. Kobayashi3, S. Ohmi3, H. Iwai3, E. Ikenaga4, Y. Takata5, K. Kobayashi4 and T. Hattori1
1 Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan
2 Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
3 Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
4 JASRI/SPring-8, Kouto 1-1-1, Mikaduki-cho, Sayo-gun, Hyogo 679-5198, Japan
5 RIKEN/SPring-8, Kouto 1-1-1, Mikaduki-cho, Sayo-gun, Hyogo 679-5148, Japan
Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2O3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd2O3/Si(100) interface without annealing and the amount of Gd-silicate increased by PDA above 400C.
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