J. Phys. IV France
Volume 132, March 2006
Page(s) 259 - 262
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 259-262

DOI: 10.1051/jp4:2006132049

Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study

Y. Yamashita1, S. Yamamoto1, K. Mukai1, J. Yoshinobu1, Y. Harada2, T. Tokushima2, Y. Takata2 and S. Shin1, 2

1  The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
2  Riken/SPring-8, Sayo-gun, Hyogo 679-5148, Japan

We investigated effects of interface roughness on the local valence electronic structures at SiO2/Si interface in order to clarify the relation between interface structures and interface electronic properties, by using soft X-ray absorption and emission spectroscopy. For atomically smooth interface, the local valence structures depend on intermediate oxidation states at the interface. For atomically rough interface, on the other hand, the local valence structures at the interface show amorphous-like electronic states irrespective of the intermediated oxidation states.

© EDP Sciences 2006