C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 215-219
Pulsed electron beam annealing: A tool for post-implantation damage control in SiCD.J. Brink1, H.W. Kunert1, J.B. Malherbe1 and J. Camassel2
1 Department of Physics, University of Pretoria, Pretoria, South Africa
2 GES, Université Montpellier II, Montpellier, France
The possibility of reversing ion implantation damage in SiC using pulsed electron beam annealing is investigated. Using Raman spectroscopy, photo luminescence and infrared reflectance it is shown that good recovery can be obtained for an electron-energy fluence of 1.1 J cm-2.
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