J. Phys. IV France
Volume 132, March 2006
Page(s) 215 - 219
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 215-219

DOI: 10.1051/jp4:2006132041

Pulsed electron beam annealing: A tool for post-implantation damage control in SiC

D.J. Brink1, H.W. Kunert1, J.B. Malherbe1 and J. Camassel2

1  Department of Physics, University of Pretoria, Pretoria, South Africa
2  GES, Université Montpellier II, Montpellier, France

The possibility of reversing ion implantation damage in SiC using pulsed electron beam annealing is investigated. Using Raman spectroscopy, photo luminescence and infrared reflectance it is shown that good recovery can be obtained for an electron-energy fluence of 1.1 J cm-2.

© EDP Sciences 2006