J. Phys. IV France 125 (2005) 443-445
Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometryJ. Batista1, 2, A. Mandelis1 and D. Shaughnessy1
1 Center for Advanced Diffusion-Wave Technologies (CADIFT), Dept. of Mechanical and Industrial Engineering, Univ. of Toronto, 5 King's College Road, Toronto, Ontario, M5S 3G8, Canada
2 Departmento de Física, Universidade Federal do Maranhão, São Luís, MA 65085-580, Brazil
In this work the photocarrier radiometric (PCR) technique has been used to determine the temperature dependence of carrier mobility and bulk lifetime in Si wafers. The noncontact, nonintrusive, and local monitoring nature of PCR surpasses the present available techniques for measuring carrier mobility. The results showed that the lifetime increases with temperature as T1.6 and the temperature dependence of carrier mobility is cm2/Vs.
© EDP Sciences 2005