J. Phys. IV France 124 (2005) 99-102
Preparation of -SiC nanowires and SiC@BN nanocablesK. Saulig-Wenger1, M. Bechelany1, D. Cornu1, T. Epicier2, F. Chassagneux1, G. Ferro1, Y. Monteil1 and P. Miele1
1 Laboratoire des Multimatériaux et Interfaces (LMI) UMR CNRS 5615, Université Claude Bernard - Lyon 1, 43 Bd. du 11 novembre 1918, 69622 Villeurbanne Cedex, France
2 Groupe d'Études de Métallurgie Physique et de Physique des Matériaux (GEMPPM) UMR CNRS, 5510, INSA - Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne Cedex, France
Cubic silicon carbide nanowires, -SiC NWs, were prepared by the direct heating of a commercial silicon power containing Si nanoparticles and a piece of carbon up to 1200C and under a nitrogen flow. The chemical composition of the nanowires was determined by EELS and their crystallographic structure by the mean of electron diffraction. When an amorphous boron nitride powder was added to the starting silicon powder, SiC@BN nanocables were obtained. They consist of a SiC nanowire core sheathed with hexagonal boron nitride.
© EDP Sciences 2005