J. Phys. IV France 11 (2001) Pr11-325-Pr11-329
Erbium doped yttria thin films deposited by injection CVDJ.L. Deschanvres and W. Meffre
Laboratoire des Matériaux et du Génie Physique, CNRS/ENSPG, BP. 46, 38402 Saint-Martin-d'Hères, France
The deposition of Er doped Y2O3 thin films by a pulsed injection assisted MO-CVD process is studied. Well crystallised Er : Y2O3 films with a columnar growth structure were deposited between 600°C and 900°C. In some cases a monoclinic phase was obtained with the classical yttria cubic phase. The preferential crystalline orientation for the cubic phase (  or  ) depended on the deposition temperature and on the oxygen content of the carrier gas. Because the Er and Y precursors are chemically similar (Er or Y tetramethylheptanedionate), the composition of the deposited films are closed to the composition of the solution. The Er luminescence was obtained for all the as deposited samples. The green and Infrared4I13/2 → 4I15/2 transition were observed. The lifetime of 4I13/2 level increased with the deposition temperature. The lifetime of the 4I13/2 level decreased with the erbium content due to up conversion effect. A lifetime of 7.5ms, closed to the bulk value, was obtained at low erbium concentration.
© EDP Sciences 2001