J. Phys. IV France 11 (2001) Pr11-301-Pr11-305
XPS investigation of UV-annealed ultrathin Ta2O2 films on siliconQ. Fang1, J.Y. Zhang2, 3, Z.M. Wang3, J.X. Wu3, B.J. O'Sullivan4, P.K. Hurley4, T.L. Leedham5, M.A. Audier6, J.P. Sénateur6 and I.W. Boyd2
1 Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, U.K.
2 Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, U. K.
3 Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China
4 National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
5 INORG-TECH, 25 James Carter Road, Mildenhall, Suffolk, Suffolk IP28 7DE, U.K
6 Institut National Polytechnique de Grenoble, École Nationale Supérieure de Physique de Grenoble, LMGP, BP. 46, 38402 Saint-Martin-d'Hères, France
We report the use of UV lamp sources, providing high photon fluxes over large-areas, to initiate the photo-deposition of ultrathin tantalum pentoxide (Ta2O5) films with physical thickness between 4-10 nm at low temperatures (below 350°C). The photo-deposited film properties, deterrnined using various standard methods and electrical measurements, have shown that good quality films can be produced. We have found that although a thin sub-stoichiometric silicon oxide layer (SiOx) was present at the Ta2O5/Si interface. The electrical properties of these tantalum oxide films are significantly improved following an UV annealing step in 1000 mbar of pure oxygen. XPS profiles revealed that the SiOx layer could be transformed to SiO2 after the UV annealing process. These XPS results are critically important for the understanding of the interface properties of the tantalum oxide films on Si in the quest to further improve the photo-CVD process.
© EDP Sciences 2001