J. Phys. IV France 11 (2001) Pr11-289-Pr11-293
Photoformation of zirconium oxide at low temperaturesJ.J. Yu, Q. Fang and I.W. Boyd
Electronic & Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, U.K.
Zirconium oxide layers exhibiting excellent electrical properties have been prepared by photo-assisted sol-gel processing. We have demonstrated that UV irradiation for only 5 min led to an improved leakage current density of 8.3x10-8A./cm2 at 1 MV/cm in accumulation, a hysteresis of only ˜ 10 mV, as determined from the positive and negative C-V sweeps, and an effective density of trapped electrons of 2.0x1010 cm -2 for the ˜ 110 Å thick layers formed. The resultant ZrO2films remained amorphous after UV-assisted processing at 400 °C, and exhibited a ratio of O/Zr of 1.7.
© EDP Sciences 2001