J. Phys. IV France 11 (2001) Pr11-221-Pr11-225
Pulsed injection MOCVD of heteroepitaxial multilayers of perovskite oxidesA. Abrutis1, V. Plausinaitiene1, 2, A. Teiserskis3, Z. Saltyte3, V. Kubilius3, B. Vengalis2, L. Dapkus2 and J.P. Sénateur4
1 Vilnius University, Department of General and Inorganic Chemistry, Naugarduko 24, 2006 Vilnius, Lithuania
2 Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania
3 Vilnius University, Department of General and lnorganic Chemistry, Naugarduko 24, 2006 Vilnius, Lithuania
4 LMGP, ENS de Physique de Grenoble, INPG, UMR 5628 du CNRS, Saint-Martin-d'Hères, France
The single liquid source pulsed injection MOCVD technique was used to deposit high quality heteroepitaxial structures containing YBa2Cu3O7-x(YBCO), SrTiO3 (STO) and La1-xSrxMnO3 (LSMO) layers. Y, Cu, Sr, La, Mn thd complexes (thd-2,2,6,6-tetramethylheptane-3,5-dionate), Ba(thd)2(phen)2 (phen-1,l0-phenanthroline) and Ti(i-OPr)2(thd)2 or Ti(i-OEt)2(thd)2 were used as precursor materials and monoglyme (1,2- dimethoxyethane) as a solvent. The deposition of heterostructures was performed in situ or ex situ in a hot wall vertical MOCVD reactor. Various heteroepitaxial structures (STO/LSMO, LSMO/STO/LSMO, STO/YBCO, LSMO/YBCO, STO/LSMO/YBCO, LSMO/STO/YBCO, STO/LSMO/STO/YBCO) were gown and studied.
© EDP Sciences 2001