J. Phys. IV France 11 (2001) Pr11-215-Pr11-219
YBa2Cu3O7-x and La1-xSrxMnO3 thin films grown by pulsed injection MOCVDA. Abrutis1, V. Plausinaitiene1, 2, A. Teiserskis1, Z. Saltyte1, V. Kubilius1, A. Bartasyte1 and J.P. Sénateur3
1 Vilnius University, Department of General and Inorganic Chemistry, Naugarduko 24, 2006 Vilnius, Lithuania
2 Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania
3 LMGP, ENS de Physique de Grenoble, INPG, UMR 5628 du CNRS, Saint-Martin-d'Hères, France
YBa2Cu3O7-x (YBCO) and La1-xSrxMnO3 (LSMO) layers were grown by single liquid source pulsed injection MOCVD technique in hot wall vertical MOCVD reactors. Y, Ba, Cu, Sr, La, Mn thd complexes (thd - 2,2,6,6-tetramethylheptane-3,5-dionate) were used as precursor materials and monoglyme (1,2-dimethoxyethane) as a solvent. The influence of deposition temperature and thickness on the properties of films on LaAlO3 and MgO substrates was studied. Thin YBCO layers deposited at 825 °C on LaAlO3 substrates exhibited epitaxial quality, sharp superconducting transition (0.2 K) and a high critical current density (= 4 MA/cm2 at 77 K). Films on MgO substrates were of lower quality. Epitaxial LSMO films were deposited on various substrates, and the tensile or compressive strains and their influence on the film properties was obvous in thinner films on LaAlO3 and SrTiO3 substrates.
© EDP Sciences 2001