J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-171 - Pr3-176
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-171-Pr3-176

DOI: 10.1051/jp4:2001321

Heat and mass transfer during producing silicon layers by chloride LPCVD process

V.G. Minkina

Heat & Mass Transfer Institute, National Academy of Sciences, P. Brovka 15, 220072 Minsk, Belarus

Thermodifision is shown to produce both qualitative and quantitative changes in the pattern of the distribution of the silicon deposition rate along the reactor. With decreasing temperature in the deposition zone or pressure in the reactor the kinetic reaction becomes the rate limiting stage of the process. In this case the factor influencing the kinetic reaction have a pronounced effect on the epitaxial layer. The approximate formulas are obtained, which permit calculating the process schedules for different geometry of the reactor.

© EDP Sciences 2001