J. Phys. IV France
Volume 11, Numéro PR2, Juillet 2001
X-Ray Lasers 2000
Page(s) Pr2-499 - Pr2-502
7th International Conference on X-Ray Lasers

J. Phys. IV France 11 (2001) Pr2-499-Pr2-502

DOI: 10.1051/jp4:2001296

Laser etching processes : Towards sub-picosecond X-UV irradiation

D. Riedel1, L. Hernandez Pozos1, S. Baggott1, K.W. Kolasinski2 and R.E. Palmer1

1  The University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT, U.K.
2  School of Chemistry, Nanoscale Physics Research Laboratory, Birmingham B15 2TT, U.K.

Since the first observation of high order harmonic generation (HOHG) in a rare gas jet, the creation of ultrashort laser pulses in the extreme UV (XUV) has been a field of continuous development. The increasing accessibility of femtosecond lasers and chirped pulsed amplifiers (CPA) has helped to fuel research into the fundamentals of the HOHG process [1], its practical implementation and tentative uses of such a source in spectroscopy. One of Our particular interests in the use of this facility is to study the ability of these ultrashort pulses to initiate photochemical processes on clean or adsorbate-covered (SF6 or CCl4) silicon surfaces. More recently, femtosecond or even atto-second laser pulses has been evoked as being the best tools to photo-ablate polymeric materials [2]. VUV studies [3] also demonstrate that higher photon energies applied on the same kind of matter can decrease dramatically the threshold fluence for the onset of ablation. We seek to determine exactly what happens when both conditions (ultrafast and VUV pulses) are combined during irradiation.

© EDP Sciences 2001