J. Phys. IV France 10 (2000) Pr2-1-Pr2-8
Prediction of LPCVD silicon film structure using combined experimental and numerical analysesA. Dollet1 and B. Caussat2
1 Institut de Science et de Génie des Matériaux et Procédés (IMP), CNRS, BP. 5, Odeillo, 66125 Font-Romeu, France
2 Laboratoire de Génie Chimique (LGC), ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
Experiments and numerical simulations were conducted to predict some structural features of silicon films prepared by Low Pressure Chemical Vapor Deposition. The relationships between the deposition conditions at film-gas interface and the resulting film structure were systematically investigated. A mechanism was proposed to account for the structural changes observed in the films when varying the deposition conditions. A numerical code was then developed which is able to simulate the crystalline structure of the deposited films. A few illustrative simulation examples are given and compared with the corresponding experiments.
© EDP Sciences 2000