J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-179 - Pr10-181
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-179-Pr10-181

DOI: 10.1051/jp4:19991045

Point-contact spectroscopy of quasi-1D conductors with CDW

A.A. Sinchenko1, Yu.I. Latyshev2, S.G. Zybtsev2 and I.G. Gorllova2

1  Moscow State Engineering-Physics Institute, 115409 Moscow, Russia
2  Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 103907 Moscow, Russia

The nature of carrier reflection from a normal metal-Peierls conductor interface is clarifiecl by studying both the characteristics of direct point contacts Au-NbSe3 (K0.3MoO3) oriental along the chains, and point contacts formed with an intermediate metallic layer sputtered onto the K0.3MoO3 crystals. In the Peierls state, for bias voltages eV smaller than the Peierls gap Δp, an excess differential resistance is observed for both experimental configuration. The dominant contribution to the excess resistance for injection along the chains is from normal reflection of carriers without changes in the sign of their charge and a momentum transfer 2pF to the condencate of electron-hole pairs carried away from the interface. For Au-K0.3MoO3 contacts the character of nonlinearity and the observed asymmetric features of the IV characteristics indicate that a substantial shift of the chemical potential occurs near the boundary with the normal metal.

© EDP Sciences 1999