J. Phys. IV France 09 (1999) Pr8-777-Pr8-784
RPECVD thin cadmium, copper and zinc sulphide filmsYu.M. Rumyantsev, N.I. Fainer, M.L. Kosinova, B.M. Ayupov and N.P. Sysoeva
Institute of Inorganic Chemistry, SB RAS, Novosibirsk-90, Russia
The thin cadmium, copper and zinc sulphide films were first synthesized by remote plasma enhance chemical vapor deposition at low pressure (10-3-10-1 Torr) and low temperatures (373-773 K). The volatile mixed ligand complex of cadmium diethyldithiocarbamate with 1,10-phenantroline Cd(S2CN(C2H5)2)2.C12H8N2 - (I), copper diethyldithiocarbamate complex Cu(S2CN(C2H5)2)2 - (II), mixture of cadmium diethyldithiocarbamate complex with 1,10-phenantroline Cd(S2CN(C2H5)2)2.C12H8N2 and heterometallic Cd(S2CN(C2H5)2)2Cul complex (III) with ready-made Cd-S-Cu fragments and mixture of cadmium/zinc (30%) diethyldithiocarbamate complex with 2, 2' bipyridyl Cd/Zn(S2CN(C2H5)2)2.C10H8N2 (IV) were used as single-source precursors. Helium was used both for selective plasma excitation of dithiocarbamate molecules and as carrier gas. The growth rates, refractive index, optical transmittance, crystalline structure and phase composition of cadmium, copper and zinc sulphide layers were investigated.
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