J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-597 - Pr8-604
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-597-Pr8-604

DOI: 10.1051/jp4:1999875

MOCVD of Ni and Ni3C films from Ni(dmen)2(tfa)2

L. Brissonneau1, A. Kacheva1, F. Senocq1, J.-K. Kang2, S.-W. Rhee2, A. Gleizes1 and C. Vahlas1

1  Laboratoire Interfaces et Matériaux, INPT-CNRS, École Nationale Supérieure de Chimie de Toulouse, 118 route de Narbonne, 31077 Toulouse cedex 4, France
2  Laboratory of Advanced Materials Processing, Department of Chemical Engineering, Pohang University of Science and Technology, POSTECH, San 31 Hyoja-dong, Nam-gu, Pohang, Kyungbuk, Korea

In this study results are reported on the transport and decomposition behavior of a trifluoroacetato complex of formula Ni(dmen)2(tfa)2, in view of its use as a precursor for the MOCVD of Ni. It is shown that Ni(dmen)2(tfa)2 can be sublimed up to 190 °C without decomposition with, however, a relatively low partial pressure. MOCVD of Ni films from this precursor on silicon and on silica are also reported, performed at temperatures varying between 275 °C and 350 °C. It was found that the process is kinetically controlled. Films are crystalline, present a granular morphology and, depending on operating conditions, are composed of Ni, of metastable nickel carbide Ni3C or of mixtures thereof. The carbon content decreases with decreasing deposition temperature and with increasing hydrogen flow rate. It is also higher in the first deposited layers, revealing a different decomposition mechanism of the precursor on an inert relatively to a metallic surface. Although processing conditions have not been optimized, MOCVD of Ni films from this family of complexes appears promising. However, modifications of the structure of Ni(dmen)2(tfa)2 are necessary to increase its volatility and consequently the growth rate of the films.

© EDP Sciences 1999