J. Phys. IV France 09 (1999) Pr8-569-Pr8-573
Deposition of Ta2O5 and (TiO2)-(Ta2O5) films from Ta(OEt)4(DMAE) and Ti(OEt)2(DMAE)2, by IMOCVDC. Jiménez1, M. Paillous1, R. Madar1, J.P. Sénateur1 and A.C. Jones2
1 LMGP-INPG, URA 1109, ENSPG, BP. 46, 38402 Saint-Martin-d'Hères, France
2 Inorgtech Ltd., 25 James Carter Road, Mildenhall, Suffolk IP28 7DE, U.K.
Ta2O5 and (TiO2)-(Ta2O5) films have been deposited on silicon at low temperature by Injection Metallorganic Chemical Vapor Deposition (IMOCVD) using Tantalum tetraetoxy dimethlaminoethoxide, Ta(OEt)4(DMAE) and Titanium bis-ethoxide bis-dimethylaminoehtoxide, Ti(OEt)2(DMAE)2 as precusors. Oxygen was used in some cases as oxidizing agent ; nevertheless, films were also obtained without oxygen. The influence of deposition conditions on the deposition process and structural properties of the films has been studied by FTIR, EPMA and XRD.
© EDP Sciences 1999