J. Phys. IV France 09 (1999) Pr8-487-Pr8-491
CVD of ZrO2 using ZrI4 as metal precursorK. Forsgren and A. Hårsta
Department of Inorganic Chemistry, Ångström Laboratory, Uppsala University, Box 538, 75121 Uppsala, Sweden
A new process for CVD of zirconium oxide is presented. With zirconium tetraiodide, ZrI4, and oxygen as starting materials, crystalline ZrO2 is deposited on Si(100) at lower temperatures than with the conventional halide processes. The films are smooth and well-adherent and show no trace of iodine. This work describes the basic features of the new process as well as the microstructural and electrical characteristics of the ZrO2 films.
© EDP Sciences 1999