J. Phys. IV France 09 (1999) Pr8-381-Pr8-386
Epitaxial growth of TiO2 (rutile) thin films by halide CVDM. Schuisky and A. Hårsta
Department of Inorganic Chemistry, The Ångström Laboratory, Uppsala University, Box 538, 75121 Uppsala, Sweden
Thin films of TiO2 have been deposited on α-Al2O3 (0 1 2) substrates from TiI4 and O2 using low pressure chemical vapour deposition. The TiO2 films were iodine-free and both the anatase and the rutile phase TiO2 could be deposited. The rutile phase was found to grow with a strong [1 0 1] orientation at deposition temperatures down to 490 °C. The rocking curve FWHM value for the (1 0 1) reflection was as low as 0.43°. The in-plane orientational relationship between the rutile film and the substrate was determined by φ-scan measurements to be [0 1 0]rutile//[1 0 0]α-Al2O3 and [1 0 1-]rutile//[1- 2- 1]α-Al2O3.
© EDP Sciences 1999