J. Phys. IV France 09 (1999) Pr8-333-Pr8-340
Layer-by-layer growth of silicon nitride films by NH3 and SiH4T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Layer-by-layer growth of silicon nitride by NH3 and SiH4 was investigated using an ultraclean lowpressure CVD system with a Xe flash lamp. Thermal nitridation on Si(100) in an NH3 environment with and without the flash lamp light irradiation is explained assuming Langmuir-type physical adsorption of NH3 and reaction of the adsorbed NH3. The reaction can be enhanced by Xe flash lamp light irradiation, and the N atom concentration tends to saturate to ~2.7x1015cm-2. In Si deposition on the ultrathin silicon nitride, it is found that N desorption from the Si nitride films hardly occurs, and the deposited Si atom concentration increases up to about the single atomic layer concentration (6.8x1014cm-2), and then the Si deposition rate drastically increases. From FTIR/ATR and RHEED measurements, the structures of the Si film on Si and the Si nitride are found to be different. Layer-by-layer growth control of Si nitride is proposed by combining atomic-layer nitridation on Si and atomic-layer growth of Si on the Si nitride.
© EDP Sciences 1999