J. Phys. IV France 09 (1999) Pr8-221-Pr8-228
Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressureE. de Paola1, P. Duverneuil1, A. Langlais2 and M. Nguyen2
1 UMR 5503 du CNRS, ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
2 EPITECH, Sumitomo Sitix Group, Route de Guernes, Follainville-Dennemmont, 78520 Limay, France
The growth rate of epitaxial Si in a chemical vapor deposition barrel reactor was investigated. Trichlorosilane was employed as a precursor diluted in H2 carrier gas at 1 atm reactor pressure. The growth rates and the fluid dynarnics were analyzed using a software package, ESTET. A new complete chemical model was introduced considering chemical reactions in the gas phase and on the solid surfaces. Finally, the predictive growth rate given by this model was in a good agreement with experimental results for different positions of the wafer on the support and for several operating conditions.
© EDP Sciences 1999