J. Phys. IV France 09 (1999) Pr8-1155-Pr8-1161
A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVDW.C. Liu, S.Y. Cheng, H.J. Pan, J.Y. Chen, W.C. Wang, S.C. Feng and K.H. Yu
Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, China
A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been grown by a LPMOCVD system. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.
© EDP Sciences 1999