J. Phys. IV France 08 (1998) Pr9-265-Pr9-268
Electrical properties of ferroelectric PZT films irradiated by oxygen ionsL. Zheng1, 2, C. Lin2 and K.V. Rao1
1 Department of Condensed Matter Physics, Royal Institute of Technology, 10044 Stockholm, Sweden
2 Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
In this paper, ferroelectric and fatigue properties of PZT films irradiated by oxygen ions have been studied. The implantation suppresses the remanent polarization of the film because of the induced charges and displacement damage, but it can be recovered after post annealing. Fatigue measurement shows that the polarization of film is rather stable along the switching cycles when the sample is implanted with 5 x 1012/cm2 to 2x1013/cm2 O+ ions, while it decreases after post annealing. We interpret such a fatigue behavior to arise from oxygen vacancy compensation.
© EDP Sciences 1998