J. Phys. IV France 08 (1998) Pr9-109-Pr9-112
Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxidesC.H. Choi and J. Lee
Department of Materials Engineering, Sung Kyun Kwan University, Suwon 440-746, Korea
Asymmetric properties of Pb(Zr,Ti)O3 (PZT) thin films has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3(LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 (LSCO) and/or LaCoO3 (LCO) have been used as an electrode. LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. Corresponding to P-V hysteresis loop, leakage current behavior and capacitance - voltage characteristic of the LCO/PZT/LSCO were asymmetric. Post annealing treatment at reducing atmosphere further increased the relaxation of the unstable remanenet polarization.
© EDP Sciences 1998