J. Phys. IV France 08 (1998) Pr9-65-Pr9-68
Formation of a sol-gel derived Pb(Zr,Ti)O3 thin-film capacitor with polycrystalline SrRuO3 electrodesK. Aoki and Y. Fukuda
Texas Instruments Tsukuba Research & Development Center Limited, 17 Miyukigaoka, Tsukuba-Shi, Ibaraki 305, Japan
The characteristics of a sol-gel derived Pb(Zr,TiO)3 capacitor with polycrystalline SrRuO3 electrodes deposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr,Ti)O3 film with columnar grain structure was formed on SrRuO3 substrates since nucleation of Pb(Zr,Ti)O3 took place at the interface with SrRuO3. A Pb(Zr,Ti)O3 capacitor with top and bottom SrRuO3 electrodes exhibited good polarization reversibility. Remanent polarization at 5.0 V was 20.8 µ c/cm2. No degradation of remanent polarization was observed up to switching cycles of 1x1010. Polycrystalline SrRuO3 thin film is expected to be a good candidate for the electrode material of Pb(Zr,Ti)O3 capacitors.
© EDP Sciences 1998