J. Phys. IV France 08 (1998) Pr9-3-Pr9-15
Effects of constrained geometries and fast access times in real ferroelectric memory devicesJ.F. Scott and A.J. Hartmann
Schools of Physics and Chemistry, University of New South Wales, Sydney 2052, Australia
A status report is given on the physical limitations imposed by both thickness and cross-sectional area in ferroelectric thin films in ferroelectric memories.
© EDP Sciences 1998