J. Phys. IV France 08 (1998) Pr3-117-Pr3-120
SiGe HBT simulation based on mp* (T, NA, xGE) numerical model HEMS. Sokolic1, B. Ferk2 and S. Amon2
1 METRONIK, Stegne 21, 1000 Ljubljana, Slovenia
2 Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, 1000 Ljubljana, Slovenia
Modeling of effective densities of states NV,SiGE in heterojunction bipolar transistor is presented, based on accurate determination of hole effective mass mp *. Algorithm for calculation of hole effective mass mp* is presented, which is optimized for numerical device modeling. Corresponding Fortran subroutine named HEM is discussed, which calculates hole effective mass in the temperature range of T=77K-300K, base doping level bellow 1020 cm-3 and germanium content xGe=0,00-0,30. Finally, Fortran subroutine HEM is incorporated into numerical device simulator MEDICI and tested through simulation of idealized heterojunction bipolar transistor.
© EDP Sciences 1998