J. Phys. IV France 08 (1998) Pr3-109-Pr3-112
Si1-x Gex structures fabricated by focused ion beam implantationTh. Ganetsos1, D. Tsamakis2, D. Panknin3, G.L.R. Mair1, J. Teichert3, L. Bischoff3 and C. Aidinis1
1 University of Athens, Physics Department, Panepistimiopolis GR 15784, Greece
2 Department of Electrical Engineering, Division of Electroscience NTUA, Heroon Polytechniou 9, Zografou 15773 Athens, Greece
3 Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden, Germany
In this work we present a study of the spreading resistance for Si1-xGex structures fabricated by F.I.B - L.M.I.S. technique. Maskless ion implantation using a Focused Ion Beam has the advantages of high resolution, the possibility to vary dose, energy and pattern design within a chip or within a structure.
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