J. Phys. IV France 08 (1998) Pr3-81-Pr3-86
Invited PaperF. Aniel1, N. Zerounian1, A. Gruhle2, C. Mähner3, G. Vernet1 and R. Adde1
Temperature dependence of SiGe HBT static and dynamic characteristics
1 IEF, URA 22 du CNRS, bâtiment 220, Université Paris Sud, 91405 Orsay cedex, France
2 Daimler-Benz Research, W. Runge Strasse 11, 89081 Ulm, Germany
3 TEMIC Semiconductor GmbH, 74025 Heilbronn, Germany
The SiGe HBT is a good candidate for MIC, MMIC and high speed logic circuits below 50GHz at ambient temperature and also at cryogenic temperature. A static and dynamic analysis of abrupt junction SiGe HBTs is presented in a wide range of temperatures, biases and frequencies up to 50GHz. The different transit times are investigated by analyzing the temperature dependence of the devices'static and HF properties between 50K and 300K.
© EDP Sciences 1998