J. Phys. IV France 08 (1998) Pr3-49-Pr3-52
Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 KM.A. Pavanello1, A.S. Nicolett2 and J.A. Martino1
1 LSI, Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, Trav. 3 No. 158, CEP 05508-900 São Paulo, Brazil
2 FATEC, Faculdade de Tecnologia de São Paulo, São Paulo, Brazil
In this work is presented an analysis of the substrate influences on the effective channel length and series resistance extraction method in fully depleted enhancement-mode Silicon-On-Insulator (SOI) nMOSFETs operating at nitrogen temperature. This analysis was supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations results and by analytical expressions solution. The effective channel length extraction method is significantly influenced by the substrate potential drop. However, the substrate influence on the series resistance extraction method can be considered negligible in all studied conditions.
© EDP Sciences 1998