J. Phys. IV France 08 (1998) Pr3-41-Pr3-44
Forced formation of ionized donor layer in p-MOSFET at cryogenic temperatures due to photon emission from its channelA.A. Frantsuzov and A.V. Kharin
Institute of Semiconductor Physics, Lavrentyeva Prosp. 13, Novosibirsk 630090, Russia
Donor ionization in the substrate of p-channel metal-oxide-silicon transistor was investigated, giving rise to a space charge region and to transistor threshold. Measurements were carried out in the temperature range from 4.2 to 8 K and at low magnitudes of longitudinal electric fields in the transistor channel between 500 and 2000 V/cm. It has been shown, that at such conditions the donor ionization in the substrate is caused by photon emission from the transistor channel.
© EDP Sciences 1998