J. Phys. IV France 08 (1998) Pr3-37-Pr3-40
Cryogenic operation of heavy ion implanted N- and P-channel MOSFETsB. Szelag1, T. Skotnicki2 and F. Balestra1
1 LPCS, UMR du CNRS, ENSERG-INPG, BP. 257, 38016 Grenoble, France
2 France Telecom, CNET Grenoble, BP. 98, 38243 Meylan, France
The low temperature operation of heavy ion implanted P- and N-channel MOSFETs is investigated. The behaviors of the transconductance, transfer and output characteristics, short channel and hot carrier effects as well as parasitic phenomena are thoroughly analyzed for deep submicron devices.
© EDP Sciences 1998