J. Phys. IV France 08 (1998) Pr3-13-Pr3-16
Temperature dependence of hot-carrier effects in 0.2 µm N- and P-channel fully-depleted Unibond MOSFETsS.H. Renn1, C. Raynaud2 and F. Balestra1
1 LPCS/ENSERG, UMR du CNRS/INPG, BP. 257, 38016 Grenoble, France
2 LETI-CEA, DMEL/CENG, 38041 Grenoble, France
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibond MOSFETs is presented in a wide range of temperature. The variations of the maximal transconductance, threshold voltage and drain current are addressed. Some recovery effects are also outlined for N-channel device.
© EDP Sciences 1998