J. Phys. IV France 7 (1997) C2-1215-C2-1216
Crystal and Electronic Structures and the Corrosion Resistance for Metal Nitrides in the TiN-AIN SystemM. Takahashi1, 2, F. Kanamaru1, 2, M. Harada1, 2 and I. Watanabe1, 2
1 ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan
2 Department of Chemistry, Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan
Both aluminum and titanium K-edge XAFS spectra of Ti1-xAlxN (0≤x≤1.0) films were measured to investigate the corrosion resistance of compounds in the TiN-AlN system. Analyses of both Al and Ti K-XAFS revealed that both Ti and Al atoms occupy the octahedral site in the NaCl-type Ti1-xAlxN (0≤x≤0.58) and the tetrahedral site in both the würtzite-type Ti1-xAlxN (0.83≤x≤1) and the intermediate phase (x≈0.7). Ti K-XAFS of Ti1-xAlxN films annealed in O2 gas flow and aged in distilled water were also measured by employing the helium ion yield technique with a small angle incidence. The XANES spectrum of annealed TiN film shows the pre-edge feature, which is observed for rutile phase TiO2 and such feature is not appreciably observed for NaCl-type Ti1-xAlxN1s and merely observed for the intermediate phase and würtzite-type Ti1-xAlxN1s. It has been found from the XANES spectra that Ti1-xAlxN1s (x=0.9) is oxidized in water and Al2TiO5 is produced while TiN and Ti1-xAlxN (x=0.9) is hardly oxidized. Results of the XPS measurements and the DV-Xα MO calculations are also discussed.
© EDP Sciences 1997